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ika10n60t trenchstop ? series ifag ipc td vls 1 rev. 2.5 20.09.2013 low loss duopack : igbt in trenchstop ? and fieldstop technology with soft, fast recovery anti-parallel emitter controlled he diode features : ? very low v ce(sat) 1.5v (typ.) ? maximum junction temperature 175c ? short circuit withstand time 5 ? s ? trenchstop ? and fieldstop technology for 600v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed ? low emi ? very soft, fast recovery anti-parallel emitter controlled he diode ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ applications ? washing machine ? air condition ? inverter and variable speed drive type v ce i c v ce(sat ),tj=25c t j,max marking code package ika10n60t 600v 10a 1.5v 175 ? c k10t60 pg-to220-3 (fullpak) maximum ratings parameter symbol value unit collector-emitter voltage, t j 2 5 ? c v c e 600 v dc collector current, limited by t jmax t c = 25 ? c t c = 100 ? c i c 11.7 7.2 a pulsed collector current, t p limited by t jmax i c p u l s 30 turn off safe operating area, v ce = 600v, t j = 175 ? c, t p = 1s - 30 diode forward current, limited by t jmax t c = 25 ? c t c = 100 ? c i f 11.9 7.4 diode pulsed current, t p limited by t jmax i f p u l s 30 gate-emitter voltage v g e ? 20 v short circuit withstand time 2) v ge = 15v, v cc ? 400v, t j ? 150 ? c t s c 5 ? s power dissipation, t c = 25 ? c p t o t 30 w operating junction temperature t j -40...+175 ? c storage temperature t s t g -55...+150 isolation voltage v i s o l 2500 v r m s 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to220-3 (fullpak)
ika10n60t trenchstop ? series ifag ipc td vls 2 rev. 2.5 20.09.2013 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r t h j c 5 k/w diode thermal resistance, junction ? case r t h j c d 5.8 thermal resistance, junction ? ambient r t h j a 80 electrical characteristic, at t j = 25 ? c, unless otherwise specified parameter symbol conditions value unit min. typ. max. static characteristic collector-emitter breakdown voltage v ( b r ) c e s v g e = 0v , i c = 0 .2m a 600 - - v collector-emitter saturation voltage v c e ( s a t ) v g e = 15 v , i c = 10 a t j =2 5 ? c t j =1 7 5 ? c - - 1.5 1.8 2.05 diode forward voltage v f v g e = 0v , i f = 1 0 a t j =2 5 ? c t j =1 7 5 ? c - - 1.6 1.6 2.05 - gate-emitter threshold voltage v g e ( t h ) i c = 0. 3m a, v c e = v g e 4.1 4.6 5.7 zero gate voltage collector current i c e s v c e = 60 0 v , v g e = 0v t j =2 5 ? c t j =1 7 5 ? c - - - - 40 1000 a gate-emitter leakage current i g e s v c e = 0v , v g e =2 0 v - - 100 na transconductance g f s v c e = 20 v , i c = 15 a - 6 - s integrated gate resistor r g i n t n o n e dynamic characteristic input capacitance c i s s v c e = 25 v , v g e = 0v , f = 1 mh z - 551 - pf output capacitance c o s s - 40 - reverse transfer capacitance c r s s - 17 - gate charge q g a t e v c c = 48 0 v, i c =1 0 a v g e = 15 v - 62 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 1) i c ( s c ) v g e = 15 v , t s c ? 5 ? s v c c = 4 0 0 v, t j = 25 ? c - 100 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
ika10n60t trenchstop ? series ifag ipc td vls 3 rev. 2.5 20.09.2013 switching characteristic, inductive load, at t j =25 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn-on delay time t d ( o n ) t j = 2 5 ? c , v c c = 4 0 0 v , i c = 1 0 a , v g e = 0 / 1 5 v , r g = 2 3 ? , l ? = 6 0 n h , c ? = 4 0 p f l ? , c ? f r o m f i g . e energy losses include ?tail? and diode reverse recovery. - 12 - ns rise time t r - 8 - turn-off delay time t d ( o f f ) - 215 - fall time t f - 38 - turn-on energy e o n - 0.16 - mj turn-off energy e o f f - 0.27 - total switching energy e t s - 0.43 - anti-parallel diode characteristic diode reverse recovery time t r r t j =2 5 ? c , v r = 4 00 v , i f = 1 0 a, d i f / d t =8 8 0 a/ ? s - 115 - ns diode reverse recovery charge q r r - 0.38 - c diode peak reverse recovery current i r r m - 10 - a diode peak rate of fall of reverse recovery current during t b d i r r /d t - 680 - a/ ? s switching characteristic, inductive load, at t j =175 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn-on delay time t d ( o n ) t j = 2 5 ? c , v c c = 4 0 0 v , i c = 1 0 a , v g e = 0 / 1 5 v , r g = 2 3 ? , l ? = 6 0 n h , c ? = 4 0 p f l ? , c ? f r o m f i g . e energy losses include ?tail? and diode reverse recovery. - 10 - ns rise time t r - 11 - turn-off delay time t d ( o f f ) - 233 - fall time t f - 63 - turn-on energy e o n - 0.26 - mj turn-off energy e o f f - 0.35 - total switching energy e t s - 0.61 - anti-parallel diode characteristic diode reverse recovery time t r r t j =1 7 5 ? c v r = 4 00 v , i f = 1 0 a, d i f / d t =8 8 0 a/ ? s - 200 - ns diode reverse recovery charge q r r - 0.92 - c diode peak reverse recovery current i r r m - 13 - a diode peak rate of fall of reverse recovery current during t b d i r r /d t - 390 - a/ ? s
ika10n60t trenchstop ? series ifag ipc td vls 4 rev. 2.5 20.09.2013 i c , c o l l e c t o r c u r r e n t 10h z 100h z 1khz 10khz 100khz 0a 5a 10a 15a 20a 25a 30a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 1000v 0,1a 1a 10a 50s 500s 5ms dc t p =1s 20s 100ms f , switching frequency v ce , collector - emitter voltage figure 1 . collector current as a function of switching frequency ( t j ? 175 ? c, d = 0.5, v ce = 400v, v ge = 0/15v, r g = 23 ? ) figure 2 . safe operating area ( d = 0, t c = 25 ? c, t j ? 175 ? c; v ge =0/15v) p t o t , p o w e r d i s s i p a t i o n 25c 50c 75c 100c 125c 150c 0w 5w 10w 15w 20w 25w 30w i c , c o l l e c t o r c u r r e n t 25c 75c 125c 0a 2a 4a 6a 8a 10a t c , case temperature t c , case temperature figure 3 . power dissipation as a function of case temperature ( t j ? 175 ? c) figure 4 . collector current as a function of case temperature ( v ge ? 15v, t j ? 175 ? c) i c i c
ika10n60t trenchstop ? series ifag ipc td vls 5 rev. 2.5 20.09.2013 i c , c o l l e c t o r c u r r e n t 0v 1v 2v 3v 4v 0a 5a 10a 15a 20a 25a 30a 15v 6v 8v 10v 12v v ge =20v i c , c o l l e c t o r c u r r e n t 0v 1v 2v 3v 4v 5v 0a 5a 10a 15a 20a 25a 30a 15v 6v 8v 10v 12v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5 . typical output characteristic ( t j = 25c) figure 6 . typical o utput characteristic ( t j = 175c) i c , c o l l e c t o r c u r r e n t 0 v 2 v 4v 6v 8v 10 v 0 a 5 a 1 0 a 1 5 a 2 0 a 2 5 a 2 5c t j = 1 75 c v c e ( s a t ) , c o l l e c t o r - e m i t t s a t u r a t i o n v o l t a g e -50c 0c 50c 100c 150c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v i c =10a i c =20a i c =5a v ge , gate-emitter voltage t j , junction temperature figure 7 . typical transfer characteristic (v ce =20v) figure 8 . typical collector - emitter saturation voltage as a function of junction temperature ( v ge = 15v)
ika10n60t trenchstop ? series ifag ipc td vls 6 rev. 2.5 20.09.2013 t , s w i t c h i n g t i m e s 0a 5a 1 0a 15a 20a 1ns 10ns 100ns t r t d(on) t f t d(off) t , s w i t c h i n g t i m e s ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1ns 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9 . typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 2 3 ? , dynamic test circuit in figure e) figure 10 . typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 10a, dynamic test circuit in figure e) t , s w i t c h i n g t i m e s 25c 50c 75c 100c 125c 15 0c 1ns 10ns 100ns t r t d(on) t f t d(off) v g e ( t h ) , g a t e - e m i t t t r s h o l d v o l t a g e -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v m in. typ. m ax. t j , junction temperature t j , junction temperature figure 11 . typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 10a, r g = 2 3 ? , dynamic test circuit in figure e) figure 12 . gate - emitter threshold voltage as a function of junction temperature ( i c = 0.3ma)
ika10n60t trenchstop ? series ifag ipc td vls 7 rev. 2.5 20.09.2013 e , s w i t c h i n g e n e r g y l o s s e s 0 a 5 a 1 0a 1 5 a 0 ,0m j 0 ,2m j 0 ,4m j 0 ,6m j 0 ,8m j 1 ,0m j e ts * e off *) e on an d e ts in c lu d e lo s s es d u e to d io de re c ov e ry e on * e , s w i t c h i n g e n e r g y l o s s e s ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0,0 mj 0,2 mj 0,4 mj 0,6 mj 0,8 mj e ts * e on * *) e on and e ts include losses due to diode recovery e off i c , collector current r g , gate resistor figure 13 . typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 2 3 ? , dynamic test circuit in figure e) figure 14 . typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 10a, dynamic test circuit in figure e) e , s w i t c h i n g e n e r g y l o s s e s 50c 100c 150c 0,0mj 0,1mj 0,2mj 0,3mj 0,4mj 0,5mj 0,6mj e ts * e on * *) e on and e ts include losses due to diode recovery e off e , s w i t c h i n g e n e r g y l o s s e s 300v 350v 400v 450v 500v 550v 0,0m j 0,2m j 0,4m j 0,6m j 0,8m j e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15 . typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 10a, r g = 2 3 ? , dynamic test circuit in figure e) figure 16 . typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 10a, r g = 2 3 ? , dynamic test circuit in figure e)
ika10n60t trenchstop ? series ifag ipc td vls 8 rev. 2.5 20.09.2013 v g e , g a t e - e m i t t e r v o l t a g e 0nc 20nc 40nc 60nc 0v 5v 10v 15v 480v 120v c , c a p a c i t a n c e 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17 . typical gate charge ( i c =10 a) figure 18 . typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( s c ) , s h o r t c i r c u i t c o l l e c t o r c u r r e n t 12v 14v 16v 18v 0a 25a 50a 75a 100a 125a 150a t s c , s h o r t c i r c u i t w i t h s t a n d t i m e 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19 . typical short circuit collector current as a function of gate- emitter voltage ( v ce ? 400v, t j ? 150 ? c) figure 20 . short circuit withstand time a s a function of gate-emitter voltage ( v ce =400v , start at t j = 25c, t jmax <150c)
ika10n60t trenchstop ? series ifag ipc td vls 9 rev. 2.5 20.09.2013 z t h j c , t r a n s i e n t t h e r m a l i m p e d a n c e 10s 100s 1ms 10ms 100ms 1s 10s 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z t h j c , t r a n s i e n t t h e r m a l i m p e d a n c e 10s 100s 1ms 10ms 100ms 1s 10s 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 21 . igbt transient thermal impedance ( d = t p / t ) figure 22 . diode transient thermal impedance as a function of pulse width ( d = t p / t ) t r r , r e v e r s e r e c o v e r y t i m e 200a/s 400a/s 600a/s 800a/s 0ns 50ns 100ns 150ns 200ns 250ns 300ns t j =25c t j =175c q r r , r e v e r s e r e c o v e r y c h a r g e 200a/s 400a/s 600a/s 800a/s 0,0c 0,1c 0,2c 0,3c 0,4c 0,5c 0,6c 0,7c 0,8c t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 23 . typical reverse recovery time as a function of diode current slope ( v r =400v, i f =10a, dynamic test circuit in figure e) figure 24 . typical reverse recovery charge as a function of diode current slope ( v r = 400v, i f = 10a, dynamic test circuit in figure e) r , ( k / w ) ? , ( s ) ? ? 1.596 4.622 6.53*10 1.985 1.288 0.5623 5.066*10 - 2 0.3324 4.152*10 - 3 0.3531 6.059*10 - 4 0.1730 7.863*10 - 5 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2 r , ( k / w ) ? , ( s ) ? ? 1.418 5.068 6.53*10 2.125 1.416 0.5890 6.455*10 - 2 0.5424 5.732*10 - 3 0.6311 1.019*10 - 3 0.5061 1.499*10 - 4 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2
ika10n60t trenchstop ? series ifag ipc td vls 10 rev. 2.5 20.09.2013 i r r , r e v e r s e r e c o v e r y c u r r e n t 200a/s 400a/s 600a/s 800a/s 0a 2a 4a 6a 8a 10a 12a 14a t j =25c t j =175c d i r r / d t , d i o d e p e a k r a t e o f f a l l o f r e v e r s e r e c o v e r y c u r r e n t 400a/s 600a/s 800a/s 0a/s -100a/s -200a/s -300a/s -400a/s -500a/s -600a/s -700a/s t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 25 . typical reverse recovery current as a function of diode current slope ( v r = 400v, i f = 10a, dynamic test circuit in figure e) figure 26 . typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, i f =10a, dynamic test circuit in figure e) i f , f o r w a r d c u r r e n t 0v 1v 2v 0a 10a 20a 30a 175c t j =25c v f , f o r w a r d v o l t a g e -50c 0c 50c 100c 150c 0,0v 0,5v 1,0v 1,5v 2,0v 10a i f =20a 5a v f , forward voltage t j , junction temperature figure 27 . typical diode forward current as a function of forward voltage figure 28 . t ypical diode forward voltage as a function of junction temperature
ika10n60t trenchstop ? series ifag ipc td vls 11 rev. 2.5 20.09.2013 please refer to mounting instructions pg-to220-3 (fullpak)
ika10n60t trenchstop ? series ifag ipc td vls 12 rev. 2.5 20.09.2013 i r r m 90% i r r m 10% i r r m di /dt f t r r i f i,v t q s q f t s t f v r di /dt r r q =q q r r s f + t =t t r r s f + figure c. definition of diodes switching characteristics p(t) 1 2 n t ( t ) j ? 1 1 ? 2 2 n n ? t c r r r r rr figure d. thermal equivalent circuit figure a. definition of switc hing times figure b. definition of switching losses
ika10n60t trenchstop ? series ifag ipc td vls 13 rev. 2.5 20.09.2013 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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